MENLO PARK, Calif., March 31 /PRNewswire/ -- Group4 Labs, LLC, an extreme
materials developer and supplier, announces the world's first 2-inch gallium
nitride (GaN)-on-Diamond semiconductor wafer. The new 2-inch version of the
recently introduced 10 x 10 mm GaN is the second product in the company's Xero
Wafer(TM) family. Sharing the same breakthrough technology, the larger GaN-on-
Diamond wafer also features a single GaN layer (2 inches in diameter)
atomically attached to a synthetic diamond substrate (also 2 inches in
diameter). This permits unprecedented high-temperature resilience for very
high-power, high-frequency electronic, solid-state white lighting, military
and photonics applications. The 2-inch wafer is ideal for use in the
conventional epitaxial growth of GaN and its aluminum- and indium-based
alloys.
The company's innovative technology enables the GaN layer to be atomically
attached to a freestanding, proprietary, polycrystalline chemical-vapor-
deposited (CVD) diamond substrate (25 microns thick). The GaN exposed is an
atomically smooth surface finish that is epi-ready for further epitaxial
deposition. The device is commercially available as a freestanding 2-inch
wafer or optionally on a disposable, silicon substrate to permit easy handling
during wafer processing.
Group4 Labs' proprietary GaN-on-Diamond technology addresses the classic
heat problem plaguing the high-power and high-speed transistor industry:
excessive heat build-up inside the chip's engine that ultimately leads to
device failure. The new material system offers a unique solution by
extricating heat from the chip's core almost at the instant that it is
generated. This is due to the nanometer proximity of the chip's active region
to diamond, a nearly perfect thermal conductor. CVD diamond's thermal
conductivity is about 3X to 30X more than that of conventional semiconductors.
Just a 3X improvement in the thermal conductivity of a transistor array's
substrate could boost the array's power-density by 10X to 100X depending on
device configuration. Group4 Labs' scientists have, for the first time,
successfully attached a 2-inch gallium nitride compound semiconductor to the
tough-to-handle diamond substrate.
According to Group4 Labs' CEO, Felix Ejeckam, "This wafer is a 2-inch
extension of what we introduced last month." He continues, "It's specially
targeted to makers of power amplifiers (for cellular base stations), microwave
and millimeter-wave circuits, UV laser diodes and ultra-bright
blue/green/white LEDs who want tremendous power and thermal performance at
little or no additional cost, compared to currently available semiconductor
solutions."
The new GaN-on-Diamond 2-inch wafers are currently sold for $5,000-$7,000
per unit (depending on quantity) through the company's online store at
http://www.Group4Labs.com/Products.
Group4 Labs, LLC (Menlo Park, CA) is an extreme materials company founded
in April 2003. The privately held company develops and manufactures extreme
semiconductor materials for a wide variety of applications in the advanced
electronics and photonics industries.
For more information, please visit http://www.Group4Labs.com.
GROUP4 LABS, LLC
1600 Adams Drive, Suite 112
Menlo Park, CA 94025
Phone: 1-650-688-5760 X 1
Website: http://www.Group4Labs.com
email: sales@Group4Labs.com, technology@Group4Labs.com
email Media Contact: marlene@smm-ads.com
This release was issued through eReleases(TM). For more information,
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SOURCE Group4 Labs, LLC
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Related links:
http://www.Group4Labs.com
CONTACT:
GROUP4 LABS, LLC, +1-650-688-5760 X 1, or
email: sales@Group4Labs.com, technology@Group4Labs.com, or email
Media Contact: marlene@smm-ads.com
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