WEST CALDWELL, N.J., March 31 /PRNewswire-FirstCall/ -- Merrimac
Industries, Inc. (Amex: MRM) today announced that it has entered into a
Memorandum of Understanding (MOU) with Nitronex Corporation to develop new
highly integrated power amplifiers using Merrimac's proprietary
Multi-Mix(R) multilayer circuit technology and high-power gallium nitride
(GaN) transistor technology from Nitronex. GaN device technology is highly
sought as a higher- power replacement for GaAs and LDMOS device technology
in communications equipment. The discrete transistors are ideal for
high-power transmitter amplifiers in third-generation (3G) and
fourth-generation (4G) wireless communications systems as well as emerging
broadband WiMAX base stations. Nitronex has developed and qualified a GaN
on Silicon process to service the needs of both Commercial Users in the
Wireless Infrastructure Industry and Military users involved in
Communications, Electronic Warfare and Radar systems. The ability to
deliver high power, high frequency and broadband devices with outstanding
efficiency is a key reason why users in both Commercial and Military
systems are designing in GaN devices now.
Because of its outstanding thermal dissipation, Merrimac's Multi-Mix(R)
technology supports the design and manufacture of reliable high-power
amplifiers using RF power transistor die rather than larger, more expensive
packaged devices. The use of transistor die allows extensive use of
automation in the amplifier manufacturing process, resulting in extremely
compact, cost- effective, and highly integrated amplifiers well suited for
a wide range of commercial wireless infrastructure applications, including
cellular and WiMAX basestations.
Multilayer Multi-Mix(R) Microtechnology provides high levels of
integration for both active and passive designs. Because Multi-Mix(R)
amplifier designs provide short, efficient thermal paths for active
devices, even high-power-density devices such as the Nitronex GaN
transistor die, they can be made extremely compact without hot spots that
can compromise reliability and amplifier operating lifetime. Multi-Mix(R)
Microtechnology is suitable for any high-power RF transistor technology
currently used in commercial and military applications, including gallium
arsenide (GaAs), silicon LDMOS, silicon carbide (SiC), and GaN.
Merrimac and Nitronex have agreed to consider the joint development of
a roadmap for next-generation amplifier designs based on Merrimac's
Multi-Mix(R) amplifier platform and Nitronex' high-performance GaN
transistor technology. The roadmap will include the development of
prototype units to be used to demonstrate the capabilities of the
Multi-Mix(R) GaN amplifiers for different frequency bands and applications.
According to Nitronex VP Sales and Marketing Chris Rauh, "We think the
combination of the Multilayer Multi-Mix(R) Microtechnology from Merrimac
and Nitronex GaN on Silicon devices is a real winner for our customers in
many markets."
Merrimac Chairman and CEO Mason N. Carter commented, "Merrimac is eager
to work with Nitronex on the development of high-power Multi-Mix(R)
amplifiers. By combining the high power density of their GaN transistors
with the excellent thermal properties of multilayer Multi-Mix(R)
Microtechnology, we are confident that we will develop new benchmarks in
terms of the RF amplifier power/size ratio, reliability, and value for our
customers."
About Nitronex
Specializing in the development and manufacturing of gallium
nitride-on-silicon (GaN-on-Si) RF power devices, Nitronex is the global
leader in high-performance GaN-on-Si RF power devices. Based on its
patented SIGANTIC(R) process -- gallium nitride on silicon technology --
Nitronex is at the forefront of commercializing GaN technology for RF
applications. The company's ability to combine the disciplines of material
growth, wafer processing, device design and wireless applications knowledge
is unique to the industry. Nitronex was founded in 1999 by graduates of the
wide bandgap program at North Carolina State University and is
headquartered in Durham, North Carolina. It holds 19 patents with 19 others
pending.
About Merrimac
Merrimac Industries, Inc. is a leader in the design and manufacture of
RF Microwave signal processing components, subsystem assemblies, and
Multi-Mix(R) micro-multifunction modules (MMFM(R)), for the worldwide
Defense, Satellite Communications (Satcom), Commercial Wireless and
Homeland Security market segments. Merrimac is focused on providing Total
Integrated Packaging Solutions(R) with Multi-Mix(R) Microtechnology, a
leading edge competency providing value to our customers through
miniaturization and integration. Multi-Mix(R) MMFM(R) provides a patented
and novel packaging technology that employs a platform modular architecture
strategy that incorporates embedded semiconductor devices, MMICs,
resistors, passive circuit elements and plated- through via holes to form a
three-dimensional integrated module used in High Power, High Frequency and
High Performance mission-critical applications. Merrimac Industries
facilities are registered under ISO 9001:2000, an internationally developed
set of quality criteria for manufacturing operations.
Merrimac Industries, Inc. has facilities located in West Caldwell, NJ
and San Jose, Costa Rica and has approximately 180 co-workers dedicated to
the design and manufacture of signal processing components, gold plating of
high- frequency microstrip and bonded stripline Teflon (PTFE) circuits and
subsystems providing Total Integrated Packaging Solutions(R) for wireless
applications. Merrimac (MRM) is listed on the American Stock Exchange.
Multi- Mix(R), Multi-Mix PICO(R), MMFM(R), System In A Package(R), SIP(R)
and Total Integrated Packaging Solutions(R) are registered trademarks of
Merrimac Industries, Inc. For more information about Merrimac Industries,
Inc. please visit our website http://www.merrimacind.com .
This press release contains statements relating to future results of
the Company (including certain projections and business trends) that are
"forward- looking statements" as defined in the Private Securities
Litigation Reform Act of 1995. Actual results may differ materially from
those projected as a result of certain risks and uncertainties. These risks
and uncertainties include, but are not limited to: risks associated with
demand for and market acceptance of existing and newly developed products
as to which the Company has made significant investments, particularly its
Multi-Mix(R) products; the possibilities of impairment charges to the
carrying value of our Multi-Mix(R) assets, thereby resulting in charges to
our earnings; risks associated with adequate capacity to obtain raw
materials and reduced control over delivery schedules and costs due to
reliance on sole source or limited suppliers; slower than anticipated
penetration into the satellite communications, defense and wireless
markets; failure of our Original Equipment Manufacturer or OEM customers to
successfully incorporate our products into their systems; changes in
product mix resulting in unexpected engineering and research and
development costs; delays and increased costs in product development,
engineering and production; reliance on a small number of significant
customers; the emergence of new or stronger competitors as a result of
consolidation movements in the market; the timing and market acceptance of
our or our OEM customers' new or enhanced products; general economic and
industry conditions; the ability to protect proprietary information and
technology; competitive products and pricing pressures; our ability and the
ability of our OEM customers to keep pace with the rapid technological
changes and short product life cycles in our industry and gain market
acceptance for new products and technologies; risks relating to
governmental regulatory actions in communications and defense programs; and
inventory risks due to technological innovation and product obsolescence,
as well as other risks and uncertainties as are detailed from time to time
in the Company's Securities and Exchange Commission filings. These
forward-looking statements are made only as of the date hereof, and the
Company undertakes no obligation to update or revise the forward-looking
statements, whether as a result of new information, future events or
otherwise.
Contact: Mason N. Carter, Chairman & CEO
973-575-1300, ext. 1202
MNC@merrimacind.com
SOURCE Merrimac Industries, Inc.
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Related links:
http://www.merrimacind.com
http://www.nitronex.com http://www.cednc.org
http://www.prnewswire.com/comp/567525.html/
CONTACT:
Mason N. Carter, Chairman & CEO, Merrimac
Industries, Inc., +1-973-575-1300, ext. 1202, MNC@merrimacind.com
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